product summary part number bv dss r ds(on) i d irhn2c50se IRHN7C50SE features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n light-weight absolute maximum ratings parameter irhn2c50se, IRHN7C50SE units i d @ v gs = 12v, t c = 25c continuous drain current 10.4 i d @ v gs = 12v, t c = 100c continuous drain current 6.5 i dm pulsed drain current 41.6 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 10.4 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt a 3.0 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 seconds) weight 2.6 (typical) g n-channel single event effect (see) rad hard provisional data sheet no. pd-9.1476a pre-radiation 600 volt, 0.60 w w w w w , (see) rad hard hexfet international rectifiers (see) rad hard technology hexfets demonstrate virtual immunity to see fail- ure. additionally, under identical pre- and post-radia- tion test conditions, international rectifiers rad hard hexfets retain identical electrical specifications up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal opera- tion within a few microseconds. since the see pro- cess utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the industry. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well-suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high-energy pulse circuits in space and weapons environments. irhn2c50se IRHN7C50SE repetitive avalanche and dv/dt rated hexfet ? transistor o c a 600v 0.60 w 10.4a
thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case 0.83 r thj-pcb junction-to-pc board tbd soldered to a copper-clad pc board source-drain diode ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 10.4 modified mosfet symbol showing the i sm pulse source current (body diode) 41.6 integral reverse p-n junction rectifier. v sd diode forward voltage 1.62 v t j = 25c, i s = 10.4a, v gs = 0v ? t rr reverse recovery time 1200 ns t j = 25c, i f = 10.4a, di/dt 100a/ m s q rr reverse recovery charge 16 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 600 v v gs = 0v, i d = 1.0 ma d bv dss / d t j temperature coefficient of breakdown 0.45 v/c reference to 25c, i d = 1.0 ma voltage r ds(on) static drain-to-source 0.60 v gs = 12v, i d = 6.5a on-state resistance 0.65 w v gs = 12v, i d = 10.4a v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0 ma g fs forward transconductance 3.0 s ( )v ds > 15v, i ds = 6.5a ? i dss zero gate voltage drain current 50 v ds = 0.8 x max rating,v gs = 0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 150 v gs =12v, i d = 10.4a q gs gate-to-source charge 30 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 75 t d(on) turn-on delay time 55 v dd = 300v, i d = 10.4a, t r rise time 190 r g = 2.35 w t d(off) turn-off delay time 210 t f fall time 130 l d internal drain inductance 2.0 l s internal source inductance 6.5 c iss input capacitance 2700 v gs = 0v, v ds = 25v c oss output capacitance 300 f = 1.0 mhz c rss reverse transfer capacitance 61 irhn2c50se, IRHN7C50SE devices pre-radiation w ? m a nc pf nh ns measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a k/w ?
radiation performance of rad hard hexfets irhn2c50se, IRHN7C50SE devices radiation characteristics international rectifier radiation hardened hex- fets are tested to verify their hardness capability. the hardness assurance program at international rectifier uses two radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiation limits of the devices irradiated to 0.5 x 10 5 rads (si) and 1 x 10 5 rads (si) are identical and are pre- sented in table 1, column 1, irhn2c50se and IRHN7C50SE, respectively. the values in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. it should be noted that at a radiation level of 1 x 10 5 rads (si), no change in limits are specified in dc parameters. high dose rate testing may be done on a special request basis, using a dose rate up to 1 x 10 12 rads (si)/sec. international rectifier radiation hardened hexfets have been characterized in neutron and heavy ion single event effects (see) environments. single event effects characterization is shown in table 3. v na table 1. low dose rate ? ? irhn2c50se 50k rads (si) parameter IRHN7C50SE 100k rads (si) units test conditions min. max. bv dss drain-to-source breakdown voltage 600 v gs = 0v, i d = 1.0 ma v gs(th) gate threshold voltage ? 2.0 4.5 v gs = v ds , i d = 1.0 ma i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 50 m av ds = 0.8 x max rating, v gs = 0v r ds(on)1 static drain-to-source ? 0.60 w v gs = 12v, i d = 6.5a on-state resistance one v sd diode forward voltage ? 1.62 v t c = 25c, i s = 10.4a, v gs = 0v table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min. typ max. min. typ. max. units test conditions v dss drain-to-source voltage 480 480 v applied drain-to-source voltage during gamma-dot i pp 6.4 6.4 a peak radiation induced photo-current di/dt 16 2.3 a/sec rate of rise of photo-current l 1 20 137 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range v ds bias v gs bias parameter typ. units ion (mev/mg/cm 2 ) (ions/cm 2 )( m m) (v) (v) bv dss 600 v ni 28 1 x 10 5 ~35 480 -5
irhn2c50se, IRHN7C50SE devices radiation characteristics case outline and dimensions smd-1 repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. @ v dd = 50v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) * [bv dss /(bv dss -v dd )] peak i l = 10.4a, v gs = 12v, 25 r g 200 w a i sd 10.4a, di/dt 130a/ m s, v dd bv dss , t j 150c suggested rg = 2.35 w ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. process characterized by independent laboratory. all pre-radiation and post-radiation test conditions are identical to facilitate direct comparison for circuit applications. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 10/96 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982 2. controlling dimension: inch 3. dimensions are shown in millimeters (inches) 4 dimension includes metallization flash 5 dimension does not include metallization flash
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